2N2920
Specifications
				
						Category:
						
																				Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
					
						Current - Collector (Ic) (Max):
						
																				30mA
					
						Product Status:
						
																				Active
					
						Transistor Type:
						
																				2 NPN (Dual)
					
						Mounting Type:
						
																				Through Hole
					
						Frequency - Transition:
						
																				-
					
						Package:
						
																				Bulk
					
						Series:
						
																				-
					
						Vce Saturation (Max) @ Ib, Ic:
						
																				300mV @ 100µA, 1mA
					
						Voltage - Collector Emitter Breakdown (Max):
						
																				60V
					
						Supplier Device Package:
						
																				TO-78-6
					
						Mfr:
						
																				Microchip Technology
					
						Current - Collector Cutoff (Max):
						
																				10µA (ICBO)
					
						Power - Max:
						
																				350mW
					
						Package / Case:
						
																				TO-78-6 Metal Can
					
						Operating Temperature:
						
																				200°C (TJ)
					
						DC Current Gain (hFE) (Min) @ Ic, Vce:
						
																				300 @ 1mA, 5V
					
						Base Product Number:
						
														2N292
					Introduction
				
						Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-78-6
					
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