SLA6026
Specifications
				
						Category:
						
																				Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
					
						Current - Collector (Ic) (Max):
						
																				10A
					
						Product Status:
						
																				Obsolete
					
						Transistor Type:
						
																				3 NPN, 3 PNP Darlington (3-Phase Bridge)
					
						Mounting Type:
						
																				Through Hole
					
						Frequency - Transition:
						
																				50MHz
					
						Package:
						
																				Tube
					
						Series:
						
																				-
					
						Vce Saturation (Max) @ Ib, Ic:
						
																				1.5V @ 12mA, 6A
					
						Voltage - Collector Emitter Breakdown (Max):
						
																				60V
					
						Supplier Device Package:
						
																				12-SIP
					
						Mfr:
						
																				Sanken Electric USA Inc.
					
						Current - Collector Cutoff (Max):
						
																				10µA (ICBO)
					
						Power - Max:
						
																				5W
					
						Package / Case:
						
																				12-SIP Exposed Tab
					
						Operating Temperature:
						
																				150°C (TJ)
					
						DC Current Gain (hFE) (Min) @ Ic, Vce:
						
																				2000 @ 6A, 4V
					
						Base Product Number:
						
														SLA60
					Introduction
				
						Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlington (3-Phase Bridge) 60V 10A 50MHz 5W Through Hole 12-SIP
					
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