JANTXV2N2919U
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
30mA
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Mounting Type:
Surface Mount
Frequency - Transition:
-
Package:
Bulk
Series:
Military, MIL-PRF-19500/355
Vce Saturation (Max) @ Ib, Ic:
300mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max):
60V
Supplier Device Package:
3-SMD
Mfr:
Microchip Technology
Current - Collector Cutoff (Max):
10µA (ICBO)
Power - Max:
350mW
Package / Case:
3-SMD, No Lead
Operating Temperature:
200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 1mA, 5V
Base Product Number:
2N2919
Introduction
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Surface Mount 3-SMD
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