JANSR2N3810
manufacturer:
Microchip Technology
Description:
PNP TRANSISTOR
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
50mA
Product Status:
Active
Transistor Type:
2 PNP (Dual)
Mounting Type:
Through Hole
Frequency - Transition:
-
Package:
Bulk
Series:
Military, MIL-PRF-19500/336
Vce Saturation (Max) @ Ib, Ic:
250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max):
60V
Supplier Device Package:
TO-78-6
Mfr:
Microchip Technology
Current - Collector Cutoff (Max):
10µA (ICBO)
Power - Max:
350mW
Package / Case:
TO-78-6 Metal Can
Operating Temperature:
-65°C ~ 200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 1mA, 5V
Base Product Number:
2N3810
Introduction
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6
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