JAN2N4854
Specifications
				
						Category:
						
																				Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
					
						Current - Collector (Ic) (Max):
						
																				600mA
					
						Product Status:
						
																				Active
					
						Transistor Type:
						
																				NPN, PNP
					
						Mounting Type:
						
																				Through Hole
					
						Frequency - Transition:
						
																				-
					
						Package:
						
																				Bulk
					
						Series:
						
																				Military, MIL-PRF-19500/421
					
						Vce Saturation (Max) @ Ib, Ic:
						
																				400mV @ 15mA, 150mA
					
						Voltage - Collector Emitter Breakdown (Max):
						
																				40V
					
						Supplier Device Package:
						
																				TO-78-6
					
						Mfr:
						
																				Microchip Technology
					
						Current - Collector Cutoff (Max):
						
																				10µA (ICBO)
					
						Power - Max:
						
																				600mW
					
						Package / Case:
						
																				TO-78-6 Metal Can
					
						Operating Temperature:
						
																				-65°C ~ 200°C (TJ)
					
						DC Current Gain (hFE) (Min) @ Ic, Vce:
						
																				100 @ 150mA, 10V
					
						Base Product Number:
						
														2N4854
					Introduction
				
						Bipolar (BJT) Transistor Array NPN, PNP 40V 600mA 600mW Through Hole TO-78-6
					
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