NTE912
Specifications
				
						Category:
						
																				Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
					
						Current - Collector (Ic) (Max):
						
																				50mA
					
						Product Status:
						
																				Active
					
						Transistor Type:
						
																				5 NPN
					
						Mounting Type:
						
																				Through Hole
					
						Frequency - Transition:
						
																				550MHz
					
						Package:
						
																				Bag
					
						Series:
						
																				-
					
						Vce Saturation (Max) @ Ib, Ic:
						
																				230mV @ 1mA, 10mA
					
						Voltage - Collector Emitter Breakdown (Max):
						
																				24V
					
						Supplier Device Package:
						
																				14-PDIP
					
						Mfr:
						
																				NTE Electronics, Inc
					
						Current - Collector Cutoff (Max):
						
																				500nA
					
						Power - Max:
						
																				750mW
					
						Package / Case:
						
																				14-DIP (0.300", 7.62mm)
					
						Operating Temperature:
						
																				-55°C ~ 125°C (TA)
					
						DC Current Gain (hFE) (Min) @ Ic, Vce:
						
																				40 @ 1mA, 3V
					
						Base Product Number:
						
														NTE9
					Introduction
				
						Bipolar (BJT) Transistor Array 5 NPN 24V 50mA 550MHz 750mW Through Hole 14-PDIP
					
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