NTE912
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
50mA
Product Status:
Active
Transistor Type:
5 NPN
Mounting Type:
Through Hole
Frequency - Transition:
550MHz
Package:
Bag
Series:
-
Vce Saturation (Max) @ Ib, Ic:
230mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max):
24V
Supplier Device Package:
14-PDIP
Mfr:
NTE Electronics, Inc
Current - Collector Cutoff (Max):
500nA
Power - Max:
750mW
Package / Case:
14-DIP (0.300", 7.62mm)
Operating Temperature:
-55°C ~ 125°C (TA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 1mA, 3V
Base Product Number:
NTE9
Introduction
Bipolar (BJT) Transistor Array 5 NPN 24V 50mA 550MHz 750mW Through Hole 14-PDIP
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