MMDT5551
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
200mA
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Mounting Type:
Surface Mount
Frequency - Transition:
300MHz
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
150mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max):
160V
Supplier Device Package:
SOT-363
Mfr:
Yangjie Technology
Current - Collector Cutoff (Max):
50nA (ICBO)
Power - Max:
200mW
Package / Case:
6-TSSOP, SC-88, SOT-363
Operating Temperature:
-55°C ~ 150°C
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
Base Product Number:
MMDT5551
Introduction
Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SOT-363
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