HBDM60V600W-7
manufacturer:
Diodes Incorporated
Description:
TRANS NPN/PNP 65V/60V SOT363
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
500mA, 600mA
Product Status:
Obsolete
Transistor Type:
NPN, PNP
Mounting Type:
Surface Mount
Frequency - Transition:
100MHz
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vce Saturation (Max) @ Ib, Ic:
400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max):
65V, 60V
Supplier Device Package:
SOT-363
Mfr:
Diodes Incorporated
Current - Collector Cutoff (Max):
100nA
Power - Max:
200mW
Package / Case:
6-TSSOP, SC-88, SOT-363
Operating Temperature:
-55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 1V / 100 @ 150mA, 10V
Base Product Number:
HBDM60V600
Introduction
Bipolar (BJT) Transistor Array NPN, PNP 65V, 60V 500mA, 600mA 100MHz 200mW Surface Mount SOT-363
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