ULN2004AFWG,N,E
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
500mA
Product Status:
Active
Transistor Type:
7 NPN Darlington
Mounting Type:
Surface Mount
Frequency - Transition:
-
Package:
Cut Tape (CT)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 500µA, 350mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
16-SOL
Mfr:
Toshiba Semiconductor And Storage
Current - Collector Cutoff (Max):
-
Power - Max:
1.25W
Package / Case:
16-SOIC (0.154", 3.90mm Width)
Operating Temperature:
-40°C ~ 85°C (TA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 350mA, 2V
Base Product Number:
ULN2004
Introduction
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA 1.25W Surface Mount 16-SOL
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