STD830CP40
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
3A
Product Status:
Obsolete
Transistor Type:
NPN, PNP
Mounting Type:
Through Hole
Frequency - Transition:
-
Package:
Tube
Series:
-
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 1A
Voltage - Collector Emitter Breakdown (Max):
400V
Supplier Device Package:
8-DIP
Mfr:
STMicroelectronics
Current - Collector Cutoff (Max):
100µA
Power - Max:
3W
Package / Case:
8-DIP (0.300", 7.62mm)
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
18 @ 700mA, 5V
Base Product Number:
STD830
Introduction
Bipolar (BJT) Transistor Array NPN, PNP 400V 3A 3W Through Hole 8-DIP
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