SG2013J-883B
manufacturer:
Microchip Technology
Description:
TRANS 7NPN DARL 50V 0.6A 16JDIP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
600mA
Product Status:
Active
Transistor Type:
7 NPN Darlington
Mounting Type:
Through Hole
Frequency - Transition:
-
Package:
Bulk
Series:
-
Vce Saturation (Max) @ Ib, Ic:
1.9V @ 600µA, 500mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
16-CDIP
Mfr:
Microchip Technology
Current - Collector Cutoff (Max):
-
Power - Max:
-
Package / Case:
-
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
900 @ 500mA, 2V
Base Product Number:
SG2013
Introduction
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 600mA Through Hole 16-CDIP
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