HN3C51F-GR(TE85L,F
manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS 2NPN 120V 0.1A SM6
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
100mA
Product Status:
Obsolete
Transistor Type:
2 NPN (Dual)
Mounting Type:
Surface Mount
Frequency - Transition:
100MHz
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max):
120V
Supplier Device Package:
SM6
Mfr:
Toshiba Semiconductor And Storage
Current - Collector Cutoff (Max):
100nA (ICBO)
Power - Max:
300mW
Package / Case:
SC-74, SOT-457
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
Base Product Number:
HN3C51
Introduction
Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
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