SLA6012
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
4A
Product Status:
Obsolete
Transistor Type:
3 NPN, 3 PNP Darlington (3-Phase Bridge)
Mounting Type:
Through Hole
Frequency - Transition:
-
Package:
Tube
Series:
-
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 6mA, 3A
Voltage - Collector Emitter Breakdown (Max):
60V
Supplier Device Package:
12-SIP
Mfr:
Sanken Electric USA Inc.
Current - Collector Cutoff (Max):
10µA (ICBO)
Power - Max:
5W, 25W
Package / Case:
12-SIP Exposed Tab
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 3A, 4V
Base Product Number:
SLA60
Introduction
Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlington (3-Phase Bridge) 60V 4A 5W, 25W Through Hole 12-SIP
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