HN1B04F(TE85L,F)
manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS NPN/PNP 30V 0.5A SM6
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
500mA
Product Status:
Obsolete
Transistor Type:
NPN, PNP
Mounting Type:
Surface Mount
Frequency - Transition:
200MHz
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
30V
Supplier Device Package:
SM6
Mfr:
Toshiba Semiconductor And Storage
Current - Collector Cutoff (Max):
100nA (ICBO)
Power - Max:
300mW
Package / Case:
SC-74, SOT-457
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 100mA, 1V
Base Product Number:
HN1B04
Introduction
Bipolar (BJT) Transistor Array NPN, PNP 30V 500mA 200MHz 300mW Surface Mount SM6
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