STA457C
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
4A
Product Status:
Active
Transistor Type:
2 NPN, 2 PNP Darlington (H-Bridge)
Mounting Type:
Through Hole
Frequency - Transition:
-
Package:
Bulk
Series:
-
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 4mA, 2A
Voltage - Collector Emitter Breakdown (Max):
60V
Supplier Device Package:
10-SIP
Mfr:
Sanken Electric USA Inc.
Current - Collector Cutoff (Max):
100µA (ICBO)
Power - Max:
4W
Package / Case:
10-SIP
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 2A, 4V
Base Product Number:
STA457
Introduction
Bipolar (BJT) Transistor Array 2 NPN, 2 PNP Darlington (H-Bridge) 60V 4A 4W Through Hole 10-SIP
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