HN1C01F-GR(TE85L,F
manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS 2NPN 50V 0.15A SM6
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
150mA
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Mounting Type:
Surface Mount
Frequency - Transition:
800MHz
Package:
Cut Tape (CT)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
SM6
Mfr:
Toshiba Semiconductor And Storage
Current - Collector Cutoff (Max):
100nA (ICBO)
Power - Max:
300mW
Package / Case:
SC-74, SOT-457
Operating Temperature:
125°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 2mA, 6V
Base Product Number:
HN1C01
Introduction
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 800MHz 300mW Surface Mount SM6
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