MPQ6502 TIN/LEAD
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
500mA
Product Status:
Obsolete
Transistor Type:
2 NPN, 2 PNP
Mounting Type:
Through Hole
Frequency - Transition:
200MHz
Package:
Tube
Series:
-
Vce Saturation (Max) @ Ib, Ic:
1.4V @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max):
30V
Supplier Device Package:
TO-116
Mfr:
Central Semiconductor Corp
Current - Collector Cutoff (Max):
30nA (ICBO)
Power - Max:
650mW
Package / Case:
14-DIP (0.300", 7.62mm)
Operating Temperature:
-65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
Base Product Number:
MPQ6502
Introduction
Bipolar (BJT) Transistor Array 2 NPN, 2 PNP 30V 500mA 200MHz 650mW Through Hole TO-116
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