2N2915
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
30mA
Product Status:
Obsolete
Transistor Type:
2 NPN (Dual)
Mounting Type:
Through Hole
Frequency - Transition:
60MHz
Package:
Bulk
Series:
-
Vce Saturation (Max) @ Ib, Ic:
-
Voltage - Collector Emitter Breakdown (Max):
45V
Supplier Device Package:
TO-78-6
Mfr:
Central Semiconductor Corp
Current - Collector Cutoff (Max):
-
Power - Max:
600mW
Package / Case:
TO-78-6 Metal Can
Operating Temperature:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10µA, 5V
Base Product Number:
2N291
Introduction
Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 30mA 60MHz 600mW Through Hole TO-78-6
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