2N5796
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
600mA
Product Status:
Obsolete
Transistor Type:
2 PNP (Dual)
Mounting Type:
Through Hole
Frequency - Transition:
200MHz
Package:
Bulk
Series:
-
Vce Saturation (Max) @ Ib, Ic:
-
Voltage - Collector Emitter Breakdown (Max):
60V
Supplier Device Package:
TO-78-6
Mfr:
Central Semiconductor Corp
Current - Collector Cutoff (Max):
-
Power - Max:
600mW
Package / Case:
TO-78-6 Metal Can
Operating Temperature:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Base Product Number:
2N579
Introduction
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 200MHz 600mW Through Hole TO-78-6
Send RFQ
Stock:
MOQ: