JAN2N5793
manufacturer:
Microchip Technology
Description:
NPN TRANSISTOR
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
600mA
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Mounting Type:
Through Hole
Frequency - Transition:
-
Package:
Bulk
Series:
Military, MIL-PRF-19500/495
Vce Saturation (Max) @ Ib, Ic:
900mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max):
40V
Supplier Device Package:
TO-78-6
Mfr:
Microchip Technology
Current - Collector Cutoff (Max):
10µA (ICBO)
Power - Max:
600mW
Package / Case:
TO-78-6 Metal Can
Operating Temperature:
-65°C ~ 200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 10V
Base Product Number:
2N5793
Introduction
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 600mW Through Hole TO-78-6
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