JANS2N3810L/TR
manufacturer:
Microsemi Corporation
Description:
BJTS
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector Cutoff (Max):
10µA (ICBO)
Product Status:
Active
Transistor Type:
2 PNP (Dual)
Mounting Type:
Through Hole
Frequency - Transition:
-
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/336
Vce Saturation (Max) @ Ib, Ic:
250mV @ 100µA, 1mA
Supplier Device Package:
TO-78-6
Mfr:
Microsemi Corporation
Operating Temperature:
-65°C ~ 200°C (TJ)
Package / Case:
TO-78-6 Metal Can
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 1mA, 5V
Base Product Number:
2N3810
Introduction
Bipolar (BJT) Transistor Array 2 PNP (Dual) Through Hole TO-78-6
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