NTE195A
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
1.5A
Product Status:
Active
Transistor Type:
NPN
Mounting Type:
Through Hole
Frequency - Transition:
-
Package:
Bag
Series:
-
Voltage - Collector Emitter Breakdown (Max):
70V
Supplier Device Package:
TO-39
Mfr:
NTE Electronics, Inc
Noise Figure (dB Typ @ F):
-
Power - Max:
8W
Gain:
10dB
Package / Case:
TO-205AD, TO-39-3 Metal Can
Operating Temperature:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 400mA, 2V
Introduction
RF Transistor NPN 70V 1.5A 8W Through Hole TO-39
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