NTE15
manufacturer:
NTE Electronics, Inc
Description:
RF TRANS NPN 19V 1.1GHZ 3SIP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
50mA
Product Status:
Active
Transistor Type:
NPN
Mounting Type:
Through Hole
Frequency - Transition:
1.1GHz
Package:
Bag
Series:
-
Voltage - Collector Emitter Breakdown (Max):
19V
Supplier Device Package:
3-SIP
Mfr:
NTE Electronics, Inc
Noise Figure (dB Typ @ F):
-
Power - Max:
300mW
Gain:
-
Package / Case:
3-SIP
Operating Temperature:
125°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
39 @ 5mA, 10V
Introduction
RF Transistor NPN 19V 50mA 1.1GHz 300mW Through Hole 3-SIP
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