HN3C10FUTE85LF
manufacturer:
Toshiba Semiconductor and Storage
Description:
RF TRANS 2 NPN 12V 7GHZ US6
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
80mA
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Mounting Type:
Surface Mount
Frequency - Transition:
7GHz
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Voltage - Collector Emitter Breakdown (Max):
12V
Supplier Device Package:
US6
Mfr:
Toshiba Semiconductor And Storage
Noise Figure (dB Typ @ F):
1.1dB @ 1GHz
Power - Max:
200mW
Gain:
11.5dB
Package / Case:
6-TSSOP, SC-88, SOT-363
Operating Temperature:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 20mA, 10V
Base Product Number:
HN3C10
Introduction
RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6
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