NTE316
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
50mA
Product Status:
Active
Transistor Type:
NPN
Mounting Type:
Through Hole
Frequency - Transition:
1.4GHz
Package:
Bag
Series:
-
Voltage - Collector Emitter Breakdown (Max):
15V
Supplier Device Package:
TO-72
Mfr:
NTE Electronics, Inc
Noise Figure (dB Typ @ F):
4.5dB @ 450MHz
Power - Max:
200mW
Gain:
15dB
Package / Case:
TO-206AF, TO-72-4 Metal Can
Operating Temperature:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 2mA, 5V
Introduction
RF Transistor NPN 15V 50mA 1.4GHz 200mW Through Hole TO-72
Send RFQ
Stock:
MOQ: