2N3497
manufacturer:
Microchip Technology
Description:
SMALL-SIGNAL BJT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
100mA
Product Status:
Active
Transistor Type:
PNP
Mounting Type:
Through Hole
Frequency - Transition:
150MHz
Package:
Bulk
Series:
-
Voltage - Collector Emitter Breakdown (Max):
120V
Supplier Device Package:
TO-18 (TO-206AA)
Mfr:
Microchip Technology
Noise Figure (dB Typ @ F):
-
Power - Max:
400mW
Gain:
-
Package / Case:
TO-206AA, TO-18-3 Metal Can
Operating Temperature:
-65°C ~ 200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 50mA, 10V
Introduction
RF Transistor PNP 120V 100mA 150MHz 400mW Through Hole TO-18 (TO-206AA)
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