NTE319P
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
50mA
Product Status:
Active
Transistor Type:
NPN
Mounting Type:
Through Hole
Frequency - Transition:
500MHz
Package:
Bag
Series:
-
Voltage - Collector Emitter Breakdown (Max):
20V
Supplier Device Package:
TO-92
Mfr:
NTE Electronics, Inc
Noise Figure (dB Typ @ F):
2.7dB @ 45MHz
Power - Max:
625mW
Gain:
29dB
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 2mA, 10V
Introduction
RF Transistor NPN 20V 50mA 500MHz 625mW Through Hole TO-92
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