NTE78
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
4A
Product Status:
Active
Transistor Type:
NPN
Mounting Type:
Through Hole
Frequency - Transition:
-
Package:
Bag
Series:
-
Voltage - Collector Emitter Breakdown (Max):
75V
Supplier Device Package:
16-DIP
Mfr:
NTE Electronics, Inc
Noise Figure (dB Typ @ F):
-
Power - Max:
1.5W
Gain:
-
Package / Case:
16-DIP (0.300", 7.62mm)
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 100mA, 10V
Introduction
RF Transistor NPN 75V 4A 1.5W Through Hole 16-DIP
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