NTE2633
manufacturer:
NTE Electronics, Inc
Description:
T-NPN SI VIDEO DR 1GHZ TO-126
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
300mA
Product Status:
Active
Transistor Type:
NPN
Mounting Type:
Through Hole
Frequency - Transition:
1.2GHz
Package:
Bag
Series:
-
Voltage - Collector Emitter Breakdown (Max):
95V
Supplier Device Package:
TO-126
Mfr:
NTE Electronics, Inc
Noise Figure (dB Typ @ F):
-
Power - Max:
3W
Gain:
-
Package / Case:
TO-225AA, TO-126-3
Operating Temperature:
175°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 50mA, 10V
Introduction
RF Transistor NPN 95V 300mA 1.2GHz 3W Through Hole TO-126
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