AT-41435G
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
60mA
Product Status:
Obsolete
Transistor Type:
NPN
Mounting Type:
Surface Mount
Frequency - Transition:
8GHz
Package:
Bulk
Series:
-
Voltage - Collector Emitter Breakdown (Max):
12V
Supplier Device Package:
35 Micro-X
Mfr:
Broadcom Limited
Noise Figure (dB Typ @ F):
1.3dB ~ 3dB @ 1GHz ~ 4GHz
Power - Max:
500mW
Gain:
10dB ~ 18.5dB
Package / Case:
4-SMD (35 Micro-X)
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 8V
Introduction
RF Transistor NPN 12V 60mA 8GHz 500mW Surface Mount 35 micro-X
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