AT-42035G
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
80mA
Product Status:
Obsolete
Transistor Type:
NPN
Mounting Type:
Surface Mount
Frequency - Transition:
8GHz
Package:
Bulk
Series:
-
Voltage - Collector Emitter Breakdown (Max):
12V
Supplier Device Package:
35 Micro-X
Mfr:
Broadcom Limited
Noise Figure (dB Typ @ F):
2dB ~ 3dB @ 2GHz ~ 4GHz
Power - Max:
600mW
Gain:
10dB ~ 13.5dB
Package / Case:
4-SMD (35 Micro-X)
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 35mA, 8V
Introduction
RF Transistor NPN 12V 80mA 8GHz 600mW Surface Mount 35 micro-X
Send RFQ
Stock:
MOQ: