BFY193PZZZA1
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
80mA
Product Status:
Obsolete
Transistor Type:
NPN
Mounting Type:
Surface Mount
Frequency - Transition:
7.5GHz
Package:
Box
Series:
-
Voltage - Collector Emitter Breakdown (Max):
12V
Supplier Device Package:
MICRO-X1
Mfr:
Infineon Technologies
Noise Figure (dB Typ @ F):
2.3dB ~ 2.9dB @ 2GHz
Power - Max:
580mW
Gain:
12.5dB ~ 13.5dB
Package / Case:
MICRO-X1
Operating Temperature:
200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 30mA, 8V
Introduction
RF Transistor NPN 12V 80mA 7.5GHz 580mW Surface Mount MICRO-X1
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