2SC5415AF-TD-E
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
100mA
Product Status:
Obsolete
Transistor Type:
NPN
Mounting Type:
Surface Mount
Frequency - Transition:
6.7GHz
Package:
Tape & Reel (TR)
Series:
-
Voltage - Collector Emitter Breakdown (Max):
12V
Supplier Device Package:
PCP
Mfr:
Onsemi
Noise Figure (dB Typ @ F):
1.1dB @ 1GHz
Power - Max:
800mW
Gain:
9dB
Package / Case:
TO-243AA
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
90 @ 30mA, 5V
Base Product Number:
2SC5415
Introduction
RF Transistor NPN 12V 100mA 6.7GHz 800mW Surface Mount PCP
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