2SB1201S-E
Specifications
Transistor Polarity ::
NPN, PNP
Product Category ::
Bipolar Transistors - BJT
Mounting Style ::
Through Hole
Maximum DC Collector Current ::
4 A, - 4 A
Collector- Emitter Voltage VCEO Max ::
50 V, - 50 V
Package / Case ::
TO-251-3
Maximum Operating Temperature ::
+ 150 C
Gain Bandwidth Product FT ::
150 MHz
Configuration ::
Single
Collector- Base Voltage VCBO ::
60 V, - 60 V
Series ::
2SB1201
Emitter- Base Voltage VEBO ::
6 V, - 6 V
Collector-Emitter Saturation Voltage ::
150 MV, - 300 MV
Manufacturer ::
Onsemi
Model Number:
2SB1201S-E
Introduction
The 2SB1201S-E,from onsemi,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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