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HN1B01FU-GR,LF
manufacturer:
Toshiba
Description:
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Category:
Semiconductors
Specifications
Transistor Polarity ::
NPN, PNP
Product Category ::
Bipolar Transistors - BJT
Mounting Style ::
SMD/SMT
Maximum DC Collector Current ::
150 MA, - 150 MA
Collector- Emitter Voltage VCEO Max ::
50 V, - 50 V
Package / Case ::
SOT-363-6
Maximum Operating Temperature ::
+ 125 C
Gain Bandwidth Product FT ::
150 MHz, 120 MHz
Configuration ::
Dual
Collector- Base Voltage VCBO ::
60 V, - 50 V
Series ::
HN1B01
Emitter- Base Voltage VEBO ::
5 V, - 5 V
Collector-Emitter Saturation Voltage ::
100 MV, - 100 MV
Manufacturer ::
Toshiba
Model Number:
HN1B01FU-GR,LF
Introduction
The HN1B01FU-GR,LF,from Toshiba,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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