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FP35R12KS4CG
manufacturer:
Infineon Technologies
Description:
IGBT Modules 1200V 35A PIM
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
400 NA
Product Category ::
IGBT Modules
Minimum Operating Temperature ::
- 40 C
Continuous Collector Current At 25 C ::
40 A
Collector- Emitter Voltage VCEO Max ::
1200 V
Pd - Power Dissipation ::
180 W
Maximum Operating Temperature ::
+ 125 C
Package ::
Module
Maximum Gate Emitter Voltage ::
20 V
Packaging ::
Box
RoHS ::
100% Green Available
Collector-Emitter Saturation Voltage ::
3.75 V
Manufacturer ::
Infineon Technologies
Model Number:
FP35R12KS4CG
Introduction
The FP35R12KS4CG,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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