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BSM150GT120DN2
manufacturer:
Infineon Technologies
Description:
IGBT Modules 1200V 150A TRIPACK
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
320 NA
Product Category ::
IGBT Modules
Minimum Operating Temperature ::
- 40 C
Length ::
121.5 Mm
Continuous Collector Current At 25 C ::
200 A
Pd - Power Dissipation ::
1.25 KW
Collector-Emitter Saturation Voltage ::
2.5 V
Mounting Style ::
Chassis Mount
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
20 V
Height ::
17 Mm
Configuration ::
Hex
Package / Case ::
EconoPACK 3A
RoHS ::
N
Width ::
61.5 Mm
Factory Pack Quantity ::
10
Brand ::
Infineon Technologies
Product Type ::
IGBT Modules
Collector- Emitter Voltage VCEO Max ::
1200 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
BSM150GT120DN2
Introduction
The BSM150GT120DN2,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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