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FZ1200R12KE3
manufacturer:
Infineon Technologies
Description:
IGBT Modules 1200V 1200A SINGLE
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
400 NA
Product Category ::
IGBT Modules
Minimum Operating Temperature ::
- 40 C
Continuous Collector Current At 25 C ::
1200 A
Collector- Emitter Voltage VCEO Max ::
1200 V
Pd - Power Dissipation ::
5.6 KW
Maximum Operating Temperature ::
+ 125 C
Package ::
Module
Maximum Gate Emitter Voltage ::
20 V
Packaging ::
Box
RoHS ::
100% Green Available
Collector-Emitter Saturation Voltage ::
1.7 V
Manufacturer ::
Infineon Technologies
Model Number:
FZ1200R12KE3
Introduction
The FZ1200R12KE3,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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