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BSM100GAL120DN2
manufacturer:
Infineon Technologies
Description:
IGBT Modules 1200V 100A CHOPPER
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
400 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
150 A
Collector- Emitter Voltage VCEO Max ::
1200 V
Pd - Power Dissipation ::
800 W
Maximum Operating Temperature ::
+ 150 C
Package ::
Module
Maximum Gate Emitter Voltage ::
20 V
Packaging ::
Box
RoHS ::
100% Green Available
Collector-Emitter Saturation Voltage ::
2.5 V
Manufacturer ::
Infineon Technologies
Model Number:
BSM100GAL120DN2
Introduction
The BSM100GAL120DN2,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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