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FZ600R17KE3
manufacturer:
Infineon Technologies
Description:
IGBT Modules MEDIUM POWER 62MM
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
400 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
1070 A
Pd - Power Dissipation ::
3150 W
Collector- Emitter Voltage VCEO Max ::
1700 V
Package / Case ::
62 Mm
Maximum Operating Temperature ::
+ 125 C
Configuration ::
Dual
Collector-Emitter Saturation Voltage ::
2.45 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
FZ600R17KE3
Introduction
The FZ600R17KE3,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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