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BSM300GA120DN2FS_E3256
manufacturer:
Infineon Technologies
Description:
IGBT Modules IGBT POWER MOD 1200v 300A
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
0.32 UA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
430 A
Pd - Power Dissipation ::
2.5 KW
Collector- Emitter Voltage VCEO Max ::
1200 V
Package / Case ::
62 Mm
Maximum Operating Temperature ::
+ 150 C
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
2.5 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
BSM300GA120DN2FS_E3256
Introduction
The BSM300GA120DN2FS_E3256,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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