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IRG7CH30K10EF
manufacturer:
Infineon Technologies
Description:
IGBT CHIP WAFER
Category:
Semiconductors
Specifications
Test Condition ::
600V, 10A, 22 Ohm, 15V
Product Category ::
IGBT Modules
Current - Collector Pulsed (Icm) ::
-
Voltage - Collector Emitter Breakdown (Max) ::
1200V
Switching Energy ::
-
@ Qty ::
0
Mounting Type ::
Surface Mount
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
3708
Factory Stock ::
0
Operating Temperature ::
-40°C ~ 175°C (TJ)
IGBT Type ::
Trench
Reverse Recovery Time (trr) ::
-
Supplier Device Package ::
Die
Part Status ::
Active
Packaging ::
Bulk
Gate Charge ::
4.8nC
Td (on/off) @ 25°C ::
10ns/90ns
Input Type ::
Standard
Package / Case ::
Die
Current - Collector (Ic) (Max) ::
10A
Power - Max ::
-
Vce(on) (Max) @ Vge, Ic ::
2.56V @ 15V, 10A
Series ::
-
Model Number:
IRG7CH30K10EF
Introduction
The IRG7CH30K10EF,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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