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IXGT32N120A3
manufacturer:
IXYS
Description:
IGBT Modules GenX3 1200V IGBTs
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
75 A
Pd - Power Dissipation ::
300 W
Collector- Emitter Voltage VCEO Max ::
1.2 KV
Package / Case ::
TO-268
Maximum Operating Temperature ::
+ 150 C
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.2 KV
Manufacturer ::
IXYS
Model Number:
IXGT32N120A3
Introduction
The IXGT32N120A3,from IXYS,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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