IXGH56N60B3D1
Specifications
Gate-Emitter Leakage Current ::
+/- 100 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
350 A
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
TO-247-3
Maximum Operating Temperature ::
+ 150 C
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.49 V
Product ::
IGBT Silicon Modules
Manufacturer ::
IXYS
Model Number:
IXGH56N60B3D1
Introduction
The IXGH56N60B3D1,from IXYS,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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