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BSM25GD120DN2E3224
manufacturer:
Infineon Technologies
Description:
IGBT Modules N-CH 1.2KV 35A
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
180 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
35 A
Pd - Power Dissipation ::
200 W
Collector- Emitter Voltage VCEO Max ::
1200 V
Package / Case ::
EconoPACK 2
Maximum Operating Temperature ::
+ 150 C
Configuration ::
Hex
Collector-Emitter Saturation Voltage ::
2.5 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
BSM25GD120DN2E3224
Introduction
The BSM25GD120DN2E3224,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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