STGIPN3H60T-H
Specifications
Gate-Emitter Leakage Current ::
-
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
3 A
Pd - Power Dissipation ::
8 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
NDIP-26L
Maximum Operating Temperature ::
+ 150 C
Packaging ::
Tray
Configuration ::
3-Phase Inverter
Collector-Emitter Saturation Voltage ::
2.15 V
Product ::
IGBT Silicon Modules
Manufacturer ::
STMicroelectronics
Model Number:
STGIPN3H60T-H
Introduction
The STGIPN3H60T-H,from STMicroelectronics,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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