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FS150R12KT4_B9
manufacturer:
Infineon Technologies
Description:
IGBT Modules IGBT Module 150A 1700V
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
150 A
Collector- Emitter Voltage VCEO Max ::
1200 V
Pd - Power Dissipation ::
750 W
Maximum Operating Temperature ::
+ 150 C
Collector-Emitter Saturation Voltage ::
2.1 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
FS150R12KT4_B9
Introduction
The FS150R12KT4_B9,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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