english
BSM50GB170DN2
manufacturer:
Infineon Technologies
Description:
IGBT Modules 1700V 50A 500W HALF-BRIDGE
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
320 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
72 A
Pd - Power Dissipation ::
500 W
Collector- Emitter Voltage VCEO Max ::
1700 V
Package / Case ::
Half Bridge1
Maximum Operating Temperature ::
+ 150 C
Configuration ::
Half Bridge
Collector-Emitter Saturation Voltage ::
3.4 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
BSM50GB170DN2
Introduction
The BSM50GB170DN2,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: