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FP35R12U1T4
manufacturer:
Infineon Technologies
Description:
IGBT Modules IGBT Module 35A 1200V
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
400 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
54 A
Pd - Power Dissipation ::
250 W
Collector- Emitter Voltage VCEO Max ::
1200 V
Package / Case ::
SmartPIM1
Maximum Operating Temperature ::
+ 150 C
Packaging ::
Bulk
Configuration ::
PIM 3-Phase Input Rectifier
Collector-Emitter Saturation Voltage ::
1.85 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
FP35R12U1T4
Introduction
The FP35R12U1T4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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