english
F4-75R07W2H3_B51
manufacturer:
Infineon Technologies
Description:
IGBT Modules
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
75 A
Pd - Power Dissipation ::
250 W
Collector- Emitter Voltage VCEO Max ::
650 V
Package / Case ::
EasyPack2B
Maximum Operating Temperature ::
+ 150 C
Configuration ::
Bridge
Collector-Emitter Saturation Voltage ::
1.35 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
F4-75R07W2H3_B51
Introduction
The F4-75R07W2H3_B51,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: